- Posted by: Milda Pieškutė
1985 – 1989 – PhD Physics and Mathematics, Institute of Semiconductor Physics of Lithuanian Academy of Sciences (now: National Center of Science and Technology)
1978 – 1983 – Physics and Mathematics, Vilnius University
Senior Research Associate, Laboratory Manager @ Dresden University of Technology at Chair of Electron Devices and Integrated Circuits, Dresden, Germany
Senior reseach fellow @ Center for Physical Sciences and Technology
Head of the Fluctuation Phenomena Laboratory @ Institute of Semiconductor Physics
Semiconductor physics, fluctuation phenomena in non-equilibrium state, hot electron noise in semiconductors, low frequency noise in semiconductors.
Semiconductor device physics of SiGe, InP, GaAs, InGaP HBTs, MOSFETs, HFETs and Carbon electronics (CNTFETs).
Microwave noise measurement on-wafer, high frequency noise modeling, compact model development (HICUM, EKV-3, CNTFET model).
Passive and active load pull measurements at possibly highest frequencies, modeling.
Nonlinear characteristics measurements: x-parameters, harmonics, harmonic distortion, modeling.
TCAD simulations of device IV, RF behavior and high frequency noise simulation.
High frequency calibration issues: calibration methods on calibration substrate, calibration on-wafer, calibration verification versus transmission line measurements and EM simulations up to 325 GHz. On-wafer de-embedding issues.
Compact modeling (HICUM, EKV, Angelov GaN, CNTFET model). Model verification versus high frequency behavior.
Cryogenic on-wafer measurements, modeling.
High frequency and power circuits (MMICs, LNAs etc.) measurements of noise factor, gain distortion inter-modulation distortion and other power characteristics.
Publications, projects & awards
M. Schröter, M. Claus, P. Sakalas, M. Haferlach, D. Wang “Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview” (Invited) IEEE Journal of the Electron Devices Society, Vol. 1, No. 1, 2013.
J. Liberis, M. Ramonas, E. Šermukšnis, P. Sakalas, N. Szaboi, M. Schuster, A. Wachowiak, A. Matulionis, „Hot-photon lifetime in Al0.23Ga0.77N/GaN channels“, IOP Publishing Semiconductor Science and Technology 29 045018 (7pp), 2014.
A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Mavredakis, N. Makris, R. K. Sharma, P. Sakalas, M. Schröter “CMOS Small-Signal and Thermal Noise Compact Modeling at High Frequencies” IEEE Trans. on Electron Devices. vol. 60, no. 11, pp. 3726-3732, 2013.
A. Šimukovič, A. Matulionis, J. Liberis, E. Šermukšnis, P. Sakalas, F. Zhang, J.H. Leach, V. Avrutin and H. Morkoç “Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors” Semiconductor Science and Technology, 28 055008 (5p), 2013.